Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions

@inproceedings{Tansu2003DesignAO,
  title={Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions},
  author={Nelson Tansu and Luke J. Mawst},
  year={2003}
}
A novel active region design is proposed to achieve long-wavelength (/spl lambda/ = 1550-nm) diode lasers based on a type-II quantum-well (QW) design of (In)GaAsN-GaAsSb grown on a GaAs substrate. The strain-compensated structures hold potential as an ideal active region for 1500-nm GaAs-based vertical cavity surface emitting lasers. A design analysis and optimization of 1550-nm emitting structures is presented. An optimal type-II multiple-QW design allows for electron-hole wavefunction… CONTINUE READING

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Interdiffused InGaAsSbN quantum wells on GaAs for 1300- to 1550-nm lasers

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