Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions

@article{Dennard1999DesignOI,
  title={Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions},
  author={R. Dennard and F. Gaensslen and Hwa-Nien Yu and V. L. Rideout and E. Bassous and A. LeBlanc},
  journal={Proceedings of the IEEE},
  year={1999},
  volume={87},
  pages={668-678}
}
This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation, to provide shallow source and drain regions and a nonuniform substrate doping profile. One-dimensional models are used to predict the… Expand
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