Design, fabrication and characterization of an α - Si: H / α - SiCN waveguide multistack for electro-optical modulation

  title={Design, fabrication and characterization of an $\alpha$ - Si: H / $\alpha$ - SiCN waveguide multistack for electro-optical modulation},
  author={Sandro Rao and Maria Arcangela Nigro and Francesco Suriano and Francesco Giuseppe Della Corte and Caterina Summonte and Alberto Scandurra},
This paper reports the design, fabrication and characterization of a planar waveguide based on an hydrogenated amorphous silicon (α-Si:H) - silicon carbonitride (SiCxNy) multistack for the realization of passive and active optical components at the wavelength 1.3--1.5 μm. The waveguide was realized by low temperature plasma enhanced chemical vapour deposition (PECVD) compatible with standard microelectronic technologies. Electro-optical modulation at λ= 1.5 μm is demonstrated in this waveguide… 


Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics
Waveguides and interferometric light amplitude modulators for application at the 1.3- and 1.55-/spl mu/m fiber communication wavelengths have been fabricated with thin-film hydrogenated amorphous
Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition.
A new amorphous silicon waveguide is realized by use of amorphously silicon carbon as cladding material and its application for optical interconnections in photonic integrated circuits on silicon motherboards is proposed.
Electrooptic modulation of multisilicon-on-insulator photonic wires
  • C. Barrios
  • Mathematics
    Journal of Lightwave Technology
  • 2006
This paper proposes and analyzes electrically modulated submicrometer-size high-index-contrast waveguides (photonic wires) based on a multisilicon-on-insulator (MSOI) platform.
In-guide pump and probe characterization of photoinduced absorption in hydrogenated amorphous silicon thin films
The in-guide pump and probe analysis illustrated in this paper is useful for the characterisation of photoinduced phenomena in thin films that are already part of an optoelectronic device.
Direct determination of the quadratic electro-optic coefficient in an a-Si:H based waveguide
Abstract The first direct determination of the quadratic electro-optic coefficient, s , of a-Si:H at λ = 1.3 μm from measurements of the electro-optic effect in an a-Si:H based waveguide is reported.
Properties of a-Si:H TFTs using silicon carbonitride as dielectric
Silicon carbonitride (SiCX NY ) thin films have been deposited by magnetically confined 13.56 MHz PECVD, using SiH4 ,C H 4, and NH3 as gas sources. The ternary system (Si, C, N) was exploited in
Silicon-based optoelectronics
The decade of the 1990's is an opportune time for scientists and engineers to create cost-effective silicon "superchips" that merge silicon photonics with advanced silicon electronics on a silicon
Infrared photodetection using a-Si:H photodiode
It is experimentally demonstrated for the first time that an a-Si:H photodiode with reach-through structure can detect infrared light of 1.31 /spl mu/m and 1.55 /spl mu/m. A maximum gain-quantum
Silicon Photonics: An Introduction
About the Authors.Foreword.Acknowledgements.1. Fundamentals.2. The Basics of Guided Waves.3. Characteristics of Optical Fibres for Communications.4. Silicon-on-Insulator (SOI) Photonics.5.
and C
  • Summonte “In-guide pump and probe characterization of photoinduced absorption in hydrogenated amorphous silicon thin films”; JOURNAL OF APPLIED PHYSICS, 100, 033104
  • 2006