Design, characteristics and application of pluggable low-inductance switching power cell of paralleled GaN HEMTs

@article{Sun2017DesignCA,
  title={Design, characteristics and application of pluggable low-inductance switching power cell of paralleled GaN HEMTs},
  author={Bingyao Sun and Rolando Burgos and Nidhi Haryani and Sandeep Bala and Jing Xu},
  journal={IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society},
  year={2017},
  pages={1077-1082}
}
This paper proposes and designs a switching cell using paralleled gallium nitride (GaN) high-electron-mobility transistor (HEMTs) in the minimized, symmetric power and gate loops. Based on the design, 1Ω gate resistor was successfully applied to speed up the switching transient. The switching cell can be easy to replace on the mother board thanks to the pluggable connector and the cell owns unique heat sinks controlling its airflow, which enables effective heat dissipating. The switching cell… CONTINUE READING

Figures, Results, and Topics from this paper.

Key Quantitative Results

  • The experimental results on the LLC resonant converter using the designed switching cell, switching with up to 500 kHz switching frequency, are presented with 98% peak efficiency and 130W/in3 power density.

References

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