Design, assessment and modeling of an integrated 0.4 µm SiGe Bipolar VCSEL driver under γ-radiation

This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4μm, which is part of the device library in a commercial 0.35μm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm… CONTINUE READING