Design, Fabrication, and Characterization of Ni/4H-SiC (0001) Schottky Diodes Array Equipped With Field Plate and Floating Guard Ring Edge Termination Structures

Abstract

In this paper, a through process for a commercial fabrication of a Schottky diodes array on thick epitaxial (50 <formula formulatype="inline"> <tex Notation="TeX">$\mu{\rm m}$</tex></formula>) 4H-SiC (0001) is presented. Nickel was used as a Schottky contact, while a tri-layer of Ti/Pt/Au was considered for ohmic contact metallization. An oxide field plate… (More)

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