Depth profiling of high-energy hydrogen-implanted 6H-SiC.

The results of implanting silicon carbide with a 1-MeV proton beam at a dose of 1 x 10(17) cm(-2) are presented. Using high-resolution confocal Raman spectroscopy, we analyzed the depth profile of the implantation damage before and after thermal annealing. When it is applied to a high-refractive-index medium, such as SiC, this technique requires careful… (More)