Deposited low temperature silicon GHz modulator

@article{Lee2013DepositedLT,
  title={Deposited low temperature silicon GHz modulator},
  author={Yoon-Ho Daniel Lee and Michael O. Thompson and Michal Lipson},
  journal={CLEO: 2013},
  year={2013},
  pages={1-2}
}
We demonstrate multi gigahertz polysilicon electro-optic modulator fabricated using low temperature excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. 

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