Deposited low temperature silicon GHz modulator

@article{Lee2013DepositedLT,
  title={Deposited low temperature silicon GHz modulator},
  author={Yoon-Ho Daniel Lee and Michael O. Thompson and Michal Lipson},
  journal={CLEO: 2013},
  year={2013},
  pages={1-2}
}
We demonstrate multi gigahertz polysilicon electro-optic modulator fabricated using low temperature excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. 
View on IEEE
doi.org
12 Citations
Background Citations
2

Figures from this paper

12 Citations

Horizontal Slot Waveguides for Silicon Photonics Back-End Integration
This thesis presents the development of integrated silicon photonic devices. These devices are compatible with the present and near future CMOS technology. High-khorizontal grating couplers and wav…
Laser crystallized low-loss polycrystalline silicon waveguides.
TLDR
The fabrication of low-loss, low temperature deposited polysilicon waveguides via laser crystallization is reported, indicating their suitability for the development of high-density integrated circuits.
Nonlinear properties of laser-processed polycrystalline silicon waveguides for integrated photonics.
TLDR
Nonlinear optical characterization of cm-long polycrystalline silicon (poly-Si) waveguides at telecom wavelengths and effects of self-phase modulation (SPM) and two-photon absorption (TPA) are reported.
Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics
TLDR
A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here, suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits.
Photonic integrated circuit components based on amorphous silicon-on-insulator technology
We present integrated-optic building blocks and functional photonic devices based on amorphous silicon-on-insulator technology. Efficient deep-etched fiber-to-chip grating couplers, low-loss…
Low-loss and low wavelength-dependence vertical interlayer transition for 3D silicon photonics.
This paper presents optimized design and measurement results for a low-loss broadband vertical interlayer transition (VIT) device located between lower and upper Si nano-photonic waveguides. The…
Photonic micro-structures produced by selective etching of laser-crystallized amorphous silicon
We present a method for the production of polycrystalline Si (poly-Si) photonic micro-structures based on laser writing. The method consists of local laser-induced crystallization of amorphous…
Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems
are compatible with different materials and allow for tuning of the components and systems are of great interest. Within this research area, laser thermal processing has emerged as an indispensable…
Athermal and wavelength-trimmable photonic filters based on TiO₂-cladded amorphous-SOI.
TLDR
An approach to fabricate CMOS backend-compatible and athermal passive photonic filters that can be corrected for fabrication inhomogeneities by UV-trimming based on low-loss amorphous-SOI waveguides with TiO2 cladding is presented.
Photonic micro-structures produced by selective etching of laser-crystallized amorphous silicon
We present a method for the production of polycrystalline Si (poly-Si) photonic micro-structures based on laser writing. The method consists of local laser-induced crystallization of amorphous…
...
...

References

SHOWING 1-10 OF 25 REFERENCES
Deposited silicon high-speed integrated electro-optic modulator.
TLDR
A micrometer-scale electro-optic modulator operating at 2.5 Gbps and 10 dB extinction ratio that is fabricated entirely from deposited silicon, using an embedded p(+)n(-)n(+) diode to achieve optical modulation using the free carrier plasma dispersion effect.
12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators.
We show a scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth. The performance of the…
Monolithic silicon chip with 10 modulator channels at 25 Gbps and 100-GHz spacing
We demonstrate a chip containing ten low-chirp silicon modulators, each operating at 25 Gbps, multiplexed by a SiN arrayed-waveguide grating with 100-GHz spacing, showing the potential for 250 Gbps…
Mach-Zehnder silicon modulator on bulk silicon substrate; toward DRAM optical interface
We present a Mach-Zehnder silicon modulator fabricated on a bulk silicon substrate featuring active length of 200 µm, modulation speed up to 5 Gb/s, power consumption of 2 pJ/bit, and extinction…
42.7 Gbit/s electro-optic modulator in silicon technology.
TLDR
A highly conductive electron accumulation layer which is induced by an external DC "gate" voltage is introduced and demonstrated for the first time data encoding with an SOH electro-optic modulator.
Scalable 3D dense integration of photonics on bulk silicon.
We experimentally show vertically stacked, multi-layer, low-temperature deposited photonics for integration on processed microelectronics. Waveguides, microrings, and crossings are fabricated out of…
A Monolithic 25-Gb/s Transceiver With Photonic Ring Modulators and Ge Detectors in a 130-nm CMOS SOI Process
A fully-integrated, silicon photonic transceiver is demonstrated in a silicon-on-insulator process using photonic microring resonator modulators for low power consumption. The trade-offs between…
Depletion-mode polysilicon optical modulators in a bulk complementary metal-oxide semiconductor process.
TLDR
These modulators represent a significant breakthrough in enabling active photonics in bulk silicon CMOS--the platform of the majority of microelectronic logic and DRAM processes--and lay the groundwork for monolithically integrated CMOS-to-DRAM photonic links.
A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si:H.
A very simple and fast Mach-Zehnder electro-optic modulator based on a p-i-n configuration, operating at λ = 1.55 μm, has been fabricated at 170 °C using the low cost technology of hydrogenated…
Depletion-mode carrier-plasma optical modulator in zero-change advanced CMOS.
TLDR
The first depletion-mode carrier-plasma optical modulator fabricated in a standard advanced complementary metal-oxide-semiconductor (CMOS) logic process (45 nm node SOI CMOS) with no process modifications is demonstrated.
...
...