Depletion-mode Ga2O3 MOSFETs on β-Ga2O3 (010) substrates with Si-ion-implanted channel and contacts

Abstract

Depletion-mode Ga<sub>2</sub>O<sub>3</sub> MOSFETs were fabricated on single-crystal β-Ga<sub>2</sub>O<sub>3</sub> (010) substrates. We applied Si-ion implantation to the ohmic contacts for low contact resistance as well as to the channel layer for reliable doping. An Al<sub>2</sub>O<sub>3</sub> gate dielectric film formed by atomic layer deposition… (More)

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