• DOI:10.1109/TED.2005.859689
• Corpus ID: 12660547

Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain

@article{Rana2005DependenceOS,
  title={Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain},
  author={Vikas Rana and Ryoichi Ishihara and Y. Hiroshima and Daisuke Abe and Satoshi Inoue and Tatsuya Shimoda and Wim Metselaar and Kees Beenakker},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={2622-2628}
}

• V. Rana, R. Ishihara, +5 authors K. Beenakker
• Published 5 December 2005
• Materials Science
• IEEE Transactions on Electron Devices

To obtain high-performance thin-film transistors (TFTs), a comprehensive study of the channel position of TFTs inside a location-controlled grain was carried out. The location of the grain is precisely controlled by the /spl mu/-Czochralski process using an excimer laser. The grain was grown from a thin Si column embedded in SiO/sub 2/ (grain filter). The characteristics of the TFTs drastically improved when the channel region was not centered above the grain filter. With TFTs whose current-flow direction is parallel to the radial direction of the grain filter, an electron mobility and subthreshold swing of /spl sim/600cm/sup 2//V/spl middot/s and 0.21V/dec respectively were obtained.