Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain
@article{Rana2005DependenceOS, title={Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain}, author={Vikas Rana and Ryoichi Ishihara and Y. Hiroshima and Daisuke Abe and Satoshi Inoue and Tatsuya Shimoda and Wim Metselaar and Kees Beenakker}, journal={IEEE Transactions on Electron Devices}, year={2005}, volume={52}, pages={2622-2628} }
To obtain high-performance thin-film transistors (TFTs), a comprehensive study of the channel position of TFTs inside a location-controlled grain was carried out. The location of the grain is precisely controlled by the /spl mu/-Czochralski process using an excimer laser. The grain was grown from a thin Si column embedded in SiO/sub 2/ (grain filter). The characteristics of the TFTs drastically improved when the channel region was not centered above the grain filter. With TFTs whose current…
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References
SHOWING 1-10 OF 19 REFERENCES
Single-grain Si TFTs with ECR-PECVD gate SiO/sub 2/
- PhysicsIEEE Transactions on Electron Devices
- 2004
High-performance Si thin-film transistors (TFTs) are fabricated inside a single, location-controlled grain with gate SiO/sub 2/ deposited by electron cyclotron resonance plasma enhanced chemical…
Property of single-crystalline Si TFTs fabricated with μ-Czochralski (grain filter) process
- Materials ScienceIS&T/SPIE Electronic Imaging
- 2003
Formation of TFTs inside location-controlled large Si grains with a low temperature process is an attractive approach for realizing system-circuit integration with displays on a large glass…
Parametric investigation of SLS-processed poly-silicon thin films for TFT applications
- Materials Science
- 2003
XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
- Materials ScienceIEEE Electron Device Letters
- 1986
Mo-gate n-channel poly-Si thin-film transistors (TFT's) have been fabricated for the first time at a low processing temperature of 260°C. A 500-1000-A-thick a-Si:H was successfully crystallized by…
High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization
- Materials Science
- 2002
We have developed high-performance polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a field-effect mobility of 566 cm2/Vs for n-channel TFT and 200 cm2/Vs for p-channel TFT on 300…
Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films
- Materials Science
- 2001
Single-crystal thin-film transistors on nonrefractory materials such as glass can be realized if monocrystalline islands of sufficient sizes can be grown at a predetermined position. By artificially…
Advanced excimer laser crystallization techniques of Si thin film for location control of large grain on glass
- Materials ScienceIS&T/SPIE Electronic Imaging
- 2001
This paper reviews advanced excimer-laser crystallization techniques and its application to crystal-Si thin film transistors (TFTs). Combined microstructure and time- resolved optical reflectivity…
Sequential lateral solidification of thin silicon films on SiO2
- Materials Science
- 1996
We report on a low‐temperature excimer‐laser‐crystallization process that produces a previously unattainable directionally solidified microstructure in thin Si films. The process involves (1)…
Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors
- Materials Science
- 1997
Single-crystal silicon thin-film transistors (TFTs) were fabricated within an ultra-large grain thin film on a glassy substrate which was formed by an excimer-laser crystallization method. The…