Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain

@article{Rana2005DependenceOS,
  title={Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain},
  author={Vikas Rana and Ryoichi Ishihara and Y. Hiroshima and Daisuke Abe and Satoshi Inoue and Tatsuya Shimoda and Wim Metselaar and Kees Beenakker},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={2622-2628}
}
To obtain high-performance thin-film transistors (TFTs), a comprehensive study of the channel position of TFTs inside a location-controlled grain was carried out. The location of the grain is precisely controlled by the /spl mu/-Czochralski process using an excimer laser. The grain was grown from a thin Si column embedded in SiO/sub 2/ (grain filter). The characteristics of the TFTs drastically improved when the channel region was not centered above the grain filter. With TFTs whose current… 
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