Dependence of GaN HEMT Millimeter-Wave Performance on Temperature

@article{Darwish2009DependenceOG,
  title={Dependence of GaN HEMT Millimeter-Wave Performance on Temperature},
  author={Abeer Moustafa Darwish and Benjamin Huebschman and Edward Viveiros and H. A. Hung},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2009},
  volume={57},
  pages={3205-3211}
}
This paper presents extensive thermal characterization of recently fabricated high-performance millimeter-wave GaN/SiC devices from four sources across temperature (-25°C to + 125°C). The changes with temperature for: output power at millimeter-wave frequencies (P<sub>out</sub>), pinchoff voltage (V<sub>p</sub>), knee-voltage (V<sub>k</sub>), onresistance (R<sub>on</sub>), power-added efficiency (PAE), saturated drain current (I<sub>dss</sub>), power gain (G), and transconductance (g<sub>m</sub… CONTINUE READING

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