Density Control of GaSb/GaAs Self-assembled Quantum Dots (〜25nm) Grown by Molecular Beam Epitaxy

@inproceedings{Suzuki1998DensityCO,
  title={Density Control of GaSb/GaAs Self-assembled Quantum Dots (〜25nm) Grown by Molecular Beam Epitaxy},
  author={Kenji Suzuki and Richard A. Hogg and Koji Tachibana and Yasuhiko Arakawa},
  year={1998}
}
  • Kenji Suzuki, Richard A. Hogg, +1 author Yasuhiko Arakawa
  • Published 1998
  • Physics
  • We report the realization of quantum-sized GaSb dots, of small diameter (~25nm), on GaAs by molecular beam epitaxy in the Stranski-Krastanow growth mode. At the deposition of 3.1 mono-layer(ML) GaSb, the average diameter and height of GaSb quantum dot(QD) are 26 nm and 6.2 nm, respectively. In addition, the density control was systematically achieved between 2.6×109 to 1.2×1010cm-2 by carefully choosing the amount of GaSb deposited from 2.5 to 3.1ML. The growth mechanism are discussed in detail… CONTINUE READING

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