Demonstration of ultimate CMOS based on 3D stacked InGaAs-OI/SGOI wire channel MOSFETs with independent back gate

@article{Irisawa2014DemonstrationOU,
  title={Demonstration of ultimate CMOS based on 3D stacked InGaAs-OI/SGOI wire channel MOSFETs with independent back gate},
  author={Toshifumi Irisawa and Keiji Ikeda and Yoshihiko Moriyama and Minoru Oda and Etsuko Mieda and Tatsuro Maeda and Tsutomu Tezuka},
  journal={2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers},
  year={2014},
  pages={1-2}
}
An ultimate CMOS structure composed of high mobility wire channel InGaAs-OI nMOSFETs and SGOI pMOSFETs has been successfully fabricated by means of sequential 3D integration. Well behaved CMOS inverters and first demonstration of InGaAs/SiGe (Ge) dual channel CMOS ring oscillators are reported. The 21-stage CMOS ring oscillator operation was achieved at Vdd as low as 0.37 V with the help of adaptive back gate bias, VBG control. 
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