Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

@article{Wei2011DemonstrationOH,
  title={Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model},
  author={Zhiqiang Wei and Toshinobu Takagi and Yoshihiko Kanzawa and Yoshimine Katoh and Takeki Ninomiya and Ken Kawai and Shunsaku Muraoka and S. Mitani and Koji Katayama and Satoshi Fujii and Ryoichi Miyanaga and Y. Kawashima and Takumi Mikawa and Kazuhiko Shimakawa and Keisuke Aono},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={31.4.1-31.4.4}
}
A new oxygen diffusion reliability model for a high-density bipolar ReRAM is developed based on hopping conduction in filaments, which allows statistical predication of activation energy. The filament in the active cells is confirmed by EBAC and TEM directly for the first time. With optimized filament size, a 256-kbit ReRAM with long-term retention exceeding 10 years at 85°C is successfully demonstrated. 
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