Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors

@article{Deal2010DemonstrationOA,
  title={Demonstration of a 0.48 THz Amplifier Module Using InP HEMT Transistors},
  author={W. R. Deal and X. B. Mei and Vesna Radisic and Kevin M. K. H. Leong and Stephen Sarkozy and Ben S. Gorospe and Jane T Lee and P. H. Liu and Wayne Yoshida and Joe Zhou and M. D. Lange and J. Uyeda and Richard Lai},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2010},
  volume={20},
  pages={289-291}
}
In this letter, we present an amplifier module operating at a frequency of 0.48 THz. This represents almost a 50% increase in solid-state amplifier operating frequency compared to prior state of the art, and is the highest reported amplifier to date. The amplifier demonstrates a peak gain of 11.7 dB measured in a waveguide split-block housing. Sub 50-nm InP HEMT transistors with an estimated f MAX > 1 THz are used to achieve this level of performance. The five stage amplifier is realized in… CONTINUE READING
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Terahertz technology

  • P. Siegel
  • IEEE Trans. Microw. Theory Tech., vol. 50, no. 3…
  • 2002
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