Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

@article{Mohata2011DemonstrationOM,
  title={Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications},
  author={Dheeraj K. Mohata and R. Bijesh and Sukti Mujumdar and Craig Eaton and Roman Engel-Herbert and Theresa S. Mayer and Vijaykrishnan Narayanan and J. M. Fastenau and Dmitri Loubychev and Amy W. K. Liu and Suman Datta},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={33.5.1-33.5.4}
}
Type II arsenide/antimonide compound semiconductor with highly staggered GaAs<inf>0.35</inf>Sb<inf>0.65</inf>/In<inf>0.7</inf>Ga<inf>0.3</inf>As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (I<inf>ON</inf>) of 190µA/µm and 100µA/µm at V<inf>DS</inf>=0.75V and 0.3V, respectively (L<inf>G</inf>=150nm). In<inf>x</inf>Ga<inf>1−x</inf>As (x=0.53, 0.7) homo-junction TFETs and GaAs<inf>0.5</inf>Sb<inf>0.5</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As… CONTINUE READING
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