Demonstration of 3 kV 4H-SiC reverse blocking MOSFET

Abstract

The authors developed 3 kV 4H-SÍC reverse blocking (RB) metal-oxide-semiconductor field-effect transistors (MOSFETs) for the first time. To achieve reverse blocking capability, the n+-substrate layer was removed by polishing, and both a Schottky contact and edge-termination structure were introduced onto the wafer backside. Fabricated SiC RB MOSFETs… (More)

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10 Figures and Tables