Delayed self-heterodyne linewidth measurement of VCSELs

  title={Delayed self-heterodyne linewidth measurement of VCSELs},
  author={Willy A. Schmid and Choong Hwan Jung and B. Weigi and Gerald Reiner and Rainer Michalzik and Karl Joachim Ebeling},
  journal={IEEE Photonics Technology Letters},
We report on high-resolution linewidth measurements of proton-implanted InGaAs-GaAs VCSELs employing the delayed self-heterodyne method. Devices with 16-/spl mu/m active diameter exhibit record low linewidths of 20 MHz and 4-MHz residual linewidth. The linewidth enhancement factor is accurately determined from the ratio of induced phase to amplitude modulation indexes. 

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Publications referenced by this paper.

Planar Bedoped VCSEL ’ s with high wallplug efficiencies

  • R. Michalzik B. Moller, E. Zeeb, T. Hackbarth, K. J. Ebeling
  • Electron . Lett .
  • 1995

InGaAs verticalcavity surfaceemitting lasers

  • E. Zeeb, B. Moller, M. Ries, K. J. Ebeling
  • IEEE J . Quantum Electron .
  • 1991

Producible GaAsbased MOVPEgrown verticalcavity topsurface emitting lasers with record performance

  • K. D. Choquette K. L. Lear, R. P. Schneider, S. P. Kilcoyne, M. K.
  • Electron . Lett .
  • 1990

Spectral linewidth of AlGaAs / GaAs I _ surfaceemitting laser

  • S. W. Corzine R. S. Geels, L. A. Coldren
  • Electron . Lett .
  • 1989

The relation of line narrowing and chirp reduction resulting from the coupling of a semiconductor laser to a passive resonator

  • E. Zeeb B. Moller, U. Fiedler, T. Hackbarth, K. J. Ebeling
  • IEEE J . Quuntum Electron .
  • 1987

Measurement of the linewidth enhancement factor cy of semiconductor lasers

  • J. G. McInerney Zhao, R. A. Morgan
  • Appl . Phys . Lett .
  • 1983

Theory of the linewidth of semiconductor lasers

  • R. F. Kazarinov, C. H. Henry
  • ZEEE J . Quuntum Electron .
  • 1982

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