Delay effects and frequency dependence of NBTI with sub-microsecond measurements

@article{Huang2015DelayEA,
  title={Delay effects and frequency dependence of NBTI with sub-microsecond measurements},
  author={Y.-C. Huang and M.-H. Hsieh and T.-Y. Yew and Wilson Wang and D. Maji and Y.-H. Lee and W.-S. Chou and P.-Z. Kang},
  journal={2015 IEEE International Reliability Physics Symposium},
  year={2015},
  pages={4A.2.1-4A.2.5}
}
Negative Bias Temperature Instability (NBTI) has been one of the major challenges during process development of advanced technology. In this paper, NBTI of High-k/metal gate (HK/MG) in 10nm FinFET technology has been evaluated. For the first time, fast measurements within sub-microsecond (15ns ~ 1μs) delay time have been demonstrated. Such short recovery time (delay time due to measurement) is achieved through built-in current comparator and a simple state machine. In this paper, we… CONTINUE READING

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