Degradation of the Tunnel Oxide and the Endurance Characteristics of the NAND Flash Memory Due to Plasma CVD Charging-Up Damage


The effects of the passivation process conditions on the interface trap density at the tunnel oxide and the endurance characteristics upon 1E6 program/erase (P/E) cycling in the NAND type flash memory have been investigated. As the rf power level on plasma enhanced(PE) CVD of SiN increases, the interface trap density(Nit) at the tunnel oxide also increases… (More)


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