• Materials Science
  • Published 1992

Defects in dual implanted silicon

@inproceedings{Chandrasekaran1992DefectsID,
  title={Defects in dual implanted silicon},
  author={Verivada Chandrasekaran},
  year={1992}
}
VII CHAPTER 1. IN1RODUCTION 1.1 References 1 5 2.1 References 7 9 2. EXPERIMENTALPROCEDURES 3. COMPUTERSIMULATIONOF DAMAGEANDDOPANTPROFILES 10 3.1.1 3.1.2 3.1.3 3.1.4 TRIM Simulation for B+ Implant in Silicon TRIM Simulation for Ge+ Implant in Silicon Suprem ill Simulation of Concentration Profiles Junction Depth from Suprem In 10 11 12 16 28 37 3.0 Introduction 3.1 Results and Discussion 

References

Publications referenced by this paper.

Ozturket al, IEEETrans. ElectronDevices,vol

  • M C.
  • Appl. Phys., A 45,
  • 1988