Defects in Boron Ion Implanted Silicon

@inproceedings{Wu2013DefectsIB,
  title={Defects in Boron Ion Implanted Silicon},
  author={W. L. K. Wu},
  year={2013}
}
  • W. L. K. Wu
  • Published 2013
  • Materials Science
  • The crystal defects formed after post-implantation annealing of boron 14 2 ion implanted silicon irradiated at 100 keV to a moderate dose (2x10 /em ) have been studied by transmission electron microscopy. Both contrast analysis and annealing kinetics show that there exist at least two different kinds of linear rod-like defects along (110) directions. It is shown in the annealing kinetics study that one kind either shrinks steadi],y remaining on (110) at high temperatures (>850°C), or transforms… CONTINUE READING

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