Defects agglomeration in the vicinity of hydrogen-related vacancy-type complexes in proton-implanted silicon

@inproceedings{Tokmoldin2001DefectsAI,
  title={Defects agglomeration in the vicinity of hydrogen-related vacancy-type complexes in proton-implanted silicon},
  author={S. Z. Tokmoldin and Bulat N. Mukashev},
  year={2001}
}
Abstract The results of IR studies of H interactions with radiation-induced defects in crystalline Si implanted with protons (Si : H) are presented. Wide doublets at ∼1980, 2060 and ∼720, 620 cm −1 with relatively low thermal stability (the doublets are fully annealed at 550 K) appear in IR absorption spectra of Si : H when implantation dose is increased. It is shown that the doublets may be assigned to nuclei of two hydrogenated amorphous phases with different densities.The Si : H stretching… CONTINUE READING