Defect introduction during E-beam metal deposition on bulk n-type 6H–SiC

@article{Wyk2004DefectID,
  title={Defect introduction during E-beam metal deposition on bulk n-type 6H–SiC},
  author={E. V. Wyk and A. Leitch},
  journal={Semiconductor Science and Technology},
  year={2004},
  volume={19},
  pages={610-614}
}
Deep level transient spectroscopy is employed in order to assess whether E-beam metal deposition on bulk n-type 6H–SiC effects any changes to the underlying material. Near-surface E-beam-related damage is shown to be device specific. The EB1-related defect at Ec − (0.346 ± 0.007) eV with σna = (5.4+1.5−1.2) × 10−16 cm2 and the EB2-related defect at Ec − (0.47 ± 0.01) eV with σna = (2.2+0.5−1.7) × 10−15 cm2 are detected in several devices, independently of the metal used for deposition. It is… Expand
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