Defect-induced semiconductor to metal transition in graphene monoxide.


This study investigates the influence of point defects on the geometric and electronic structure of graphene monoxide (GMO) via density functional theory calculations. In aspects of defect formation energy, GMOs with oxygen vacancies and bridge interstitial defects are more likely to form when compared to GMOs with defects such as carbon vacancies and… (More)
DOI: 10.1039/c4cp01518e


Cite this paper

@article{Woo2014DefectinducedST, title={Defect-induced semiconductor to metal transition in graphene monoxide.}, author={Jungwook Woo and Kyung-Han Yun and Sung Beom Cho and Yong-Chae Chung}, journal={Physical chemistry chemical physics : PCCP}, year={2014}, volume={16 26}, pages={13477-82} }