# Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeS e 2

@article{Banerjee2014DefectinducedNM,
title={Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeS e 2},
author={Karan Banerjee and Jaesung Son and Praveen Deorani and Peng Ren and Lan Wang and Hyunsoo Yang},
journal={Physical Review B},
year={2014},
volume={90},
pages={235427}
}
Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator $\mathrm{BiSbTeS}{\mathrm{e}}_{2}$ at temperatures below 50 K. Our analysis shows that the negative MR originates from an increase in the density of defect states created by the introduction of disorder, which leaves the…
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