# Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeS e 2

@article{Banerjee2014DefectinducedNM, title={Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeS e 2}, author={Karan Banerjee and Jaesung Son and Praveen Deorani and Peng Ren and Lan Wang and Hyunsoo Yang}, journal={Physical Review B}, year={2014}, volume={90}, pages={235427} }

Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator $\mathrm{BiSbTeS}{\mathrm{e}}_{2}$ at temperatures below 50 K. Our analysis shows that the negative MR originates from an increase in the density of defect states created by the introduction of disorder, which leaves the…

## 37 Citations

Magnetic proximity effect in the topological insulator BiSbTeSe2

- Materials Science
- 2015

Magnetic proximity effects can lead to novel phenomena in the transport properties of topological insulators. In this study, we demonstrate a characteristic fourfold symmetry in the angular…

Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3.

- Physics, MedicineNano letters
- 2017

It is demonstrated that the photoinduced inverse spin Hall effect (PISHE) of the top SSs and the 2DEG can be separated based on their opposite signs, and it is found that the PISHE in the2DEG is dominated by the extrinsic mechanism, as revealed by the temperature dependence of the PISE.

Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices.

- Materials Science, PhysicsACS nano
- 2018

The study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x = 0.08 suggests the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors.

Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3at ultra-low temperature.

- Physics, MedicineJournal of physics. Condensed matter : an Institute of Physics journal
- 2020

The results indicate that transport through topological surface states (TSS) in sculpted nanowires of Bi2Te3 can be achieved at mK range and linear MR observed at ~ 2 K could be the coexistence of electron transport through TSS and contribution from the bulk band.

Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires

- Materials Science, MedicineScientific Reports
- 2017

The experimental observation of variable range hopping conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi2Se3) indicates the presence of 2D topological surface states and the surface state contribution to the conductance was found very close to one conductance quantum.

Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires

- Physics, Materials ScienceScientific Reports
- 2019

The experimental results of large negative longitudinal magnetoresistance in 3D TIs further indicate that axial anomaly is a universal phenomenon in generic 3D metals.

Systematic Study of Ferromagnetism in CrxSb2−xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques

- Materials Science, MedicineScientific Reports
- 2018

This work provides a detailed systematic study of the magnetic state in highly doped CrxSb2−xTe3 thin films using electrical transport, magneto-optic Kerr effect measurements and terahertz time domain spectroscopy, and reports an efficient electric gating of ferromagnetic order using the electrolyte ionic liquid.

Confined-path interference suppressed quantum correction on weak antilocalization effect in a BiSbTeSe2 topological insulator

- Physics
- 2018

We have studied the magnetoconductance in a topological insulator BiSbTeSe2 with different probe lengths. The magnetoconductance correction reduces by a factor of 2 when the probe length is…

Evidence for exchange Dirac gap in magnetotransport of topological insulator–magnetic insulator heterostructures

- PhysicsPhysical Review B
- 2019

Transport signatures of exchange gap opening because of magnetic proximity effect (MPE) are reported for bilayer structures of Bi2Se3 thin films on yttrium iron garnet (YIG) and thulium iron garnet…

Quantum Coherence Modulation in Bismuth Selenide Topological Insulator Thin Film by Ion Irradiation

- Materials Science
- 2021

Abstract The robust surface states of bismuth selenide (Bi2Se3) topological insulator (TI) that could potentially be harnessed for quantum computing and spintronics applications are often eclipsed by…

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