Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeS e 2

@article{Banerjee2014DefectinducedNM,
  title={Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeS e 2},
  author={Karan Banerjee and Jaesung Son and Praveen Deorani and Peng Ren and Lan Wang and Hyunsoo Yang},
  journal={Physical Review B},
  year={2014},
  volume={90},
  pages={235427}
}
Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator $\mathrm{BiSbTeS}{\mathrm{e}}_{2}$ at temperatures below 50 K. Our analysis shows that the negative MR originates from an increase in the density of defect states created by the introduction of disorder, which leaves the… 
Magnetic proximity effect in the topological insulator BiSbTeSe2
Magnetic proximity effects can lead to novel phenomena in the transport properties of topological insulators. In this study, we demonstrate a characteristic fourfold symmetry in the angular
Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3.
TLDR
It is demonstrated that the photoinduced inverse spin Hall effect (PISHE) of the top SSs and the 2DEG can be separated based on their opposite signs, and it is found that the PISHE in the2DEG is dominated by the extrinsic mechanism, as revealed by the temperature dependence of the PISE.
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The results indicate that transport through topological surface states (TSS) in sculpted nanowires of Bi2Te3 can be achieved at mK range and linear MR observed at ~ 2 K could be the coexistence of electron transport through TSS and contribution from the bulk band.
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The experimental observation of variable range hopping conduction in focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topological insulator (Bi2Se3) indicates the presence of 2D topological surface states and the surface state contribution to the conductance was found very close to one conductance quantum.
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Confined-path interference suppressed quantum correction on weak antilocalization effect in a BiSbTeSe2 topological insulator
We have studied the magnetoconductance in a topological insulator BiSbTeSe2 with different probe lengths. The magnetoconductance correction reduces by a factor of 2 when the probe length is
Evidence for exchange Dirac gap in magnetotransport of topological insulator–magnetic insulator heterostructures
Transport signatures of exchange gap opening because of magnetic proximity effect (MPE) are reported for bilayer structures of Bi2Se3 thin films on yttrium iron garnet (YIG) and thulium iron garnet
Quantum Coherence Modulation in Bismuth Selenide Topological Insulator Thin Film by Ion Irradiation
Abstract The robust surface states of bismuth selenide (Bi2Se3) topological insulator (TI) that could potentially be harnessed for quantum computing and spintronics applications are often eclipsed by
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References

SHOWING 1-10 OF 51 REFERENCES
APPL
Statistical packages have been used for decades to analyze large datasets or to perform mathematically intractable statistical methods. These packages are not capable of working with random variables
Soc
  • Jpn. 67, 2857 (1998). 235427-4 DEFECT-INDUCED NEGATIVE MAGNETORESISTANCE AND . . . PHYSICAL REVIEW B 90, 235427
  • 2014
Phys
  • Rev. B 87, 245303
  • 2013
Phys
  • Rev. B 87, 035122
  • 2013
Phys
  • Rev. B 88, 121103
  • 2013
Phys
  • Rev. B 87, 085442
  • 2013
Sci
  • Rep. 3, 3513
  • 2013
Sci
  • Rep. 3, 1564
  • 2013
A
  • de la Torre, S. M. Walker, G. Balakrishnan, F. Baumberger, and C. R. A. Catlow, Adv. Mater. 24, 2154
  • 2012
K
  • He, L.-l. Wang, X. Chen, X. Dai, Z. Fang, Q.-K. Xue, X. Ma, and Y. Wang, Phys. Rev. Lett. 108, 036805
  • 2012
...
1
2
3
4
5
...