Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering.

@article{Paskiewicz2011DefectfreeSS,
  title={Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering.},
  author={Deborah Marie Paskiewicz and Boy Tanto and Donald Elvin Savage and Michelle M. Roberts},
  journal={ACS nano},
  year={2011},
  volume={5 7},
  pages={
          5814-22
        }
}
Many important materials cannot be grown as single crystals in bulk form because strain destroys long-range crystallinity. Among them, alloys of group IV semiconductors, specifically SiGe alloys, have significant technological value. Using nanomembrane strain engineering methods, we demonstrate the fabrication of fully elastically relaxed Si(1-x)Ge(x) nanomembranes (NMs) for use as growth substrates for new materials. To do so, we grow defect-free, uniformly and elastically strained SiGe layers… CONTINUE READING
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