Defect-free single-crystal Ge island arrays on insulator by rapid-melting-growth combined with seed-positioning technique

@inproceedings{Toko2009DefectfreeSG,
  title={Defect-free single-crystal Ge island arrays on insulator by rapid-melting-growth combined with seed-positioning technique},
  author={Kaoru Toko and Takashi Sakane and Takanori Tanaka and Taizoh Sadoh and Masanobu Miyao},
  year={2009}
}
Single-crystal Ge island arrays on SiO2/Si structures are desired to merge advanced Ge devices into Si large scale integrated circuit (LSI). We have developed the rapid-melting-growth process of amorphous Ge by using Ni-imprint-induced Si (111) fine crystals (∼1 μmϕ) as the growth seed. Arrays of (111) oriented single-crystal Ge islands with device size (∼10 μmϕ) are uniformly fabricated on SiO2/Si substrates. The cross-sectional transmission electron microscopy observation reveals that Ge… CONTINUE READING