• Corpus ID: 249282612

Defect Profiling of Oxide-Semiconductor Interfaces Using Low-Energy Muons

@inproceedings{Martins2022DefectPO,
  title={Defect Profiling of Oxide-Semiconductor Interfaces Using Low-Energy Muons},
  author={Maria In{\^e}s Mendes Martins and Piyush Kumar and Judith Woerle and Xiaojie Ni and Ulrike Grossner and Thomas Prokscha},
  year={2022}
}

• M. I. Martins, Piyush Kumar, +3 authors T. Prokscha
• Published 2 June 2022
• Physics

Muon spin rotation with low-energy muons (LE- µ SR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of ≈ 200 nm. In this work, we show the potential of utilizing low-energy muons for a depth-resolved characterization of oxide-semiconductor interfaces, i.e. for silicon (Si) and silicon carbide (4H-SiC). Silicon dioxide (SiO 2 ) grown by plasma-enhanced chemical vapor deposition (PECVD) and by thermal oxidation of the SiO 2 -semiconductor interface are compared with respect to interface and defect formation. The nanometer depth resolution of LE- µ SR allows for a clear distinction between the oxide and semiconductor layers, while also quantifying the extension of structural changes caused by the oxidation of both Si and SiC.