Defect-Electron Spreading on the TiO2(110) Semiconductor Surface by Water Adsorption.

The dissociative adsorption of water at oxygen-vacancy defect sites on the TiO2(110) surface spatially redistributes the defect electron density originally present at subsurface sites near the defect sites. This redistribution of defect-electrons makes them more accessible to Ti(4+) ions surrounding the defects. The redistribution of electron density… (More)