Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors.

@article{Iqbal2015DeepultravioletlightdrivenRD,
  title={Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors.},
  author={Muhammad Waqas Iqbal and Muhammad Zahir Iqbal and Muhammad Farooq Khan and Muhammad Arslan Shehzad and Yongho Seo and Jonghwa Eom},
  journal={Nanoscale},
  year={2015},
  volume={7 2},
  pages={
          747-57
        }
}
Improvement of the electrical and photoelectric characteristics is essential to achieve an advanced performance of field-effect transistors and optoelectronic devices. Here we have developed a doping technique to drastically improve electrical and photoelectric characteristics of single-layered, bi-layered and multi-layered WS2 field-effect transistors (FET). After illuminating with deep ultraviolet (DUV) light in a nitrogen environment, WS2 FET shows an enhanced charge carrier density… 
View on PubMed
rsc.org
46 Citations
Background Citations
2
Methods Citations
1

Figures from this paper

46 Citations

Citation Type

Citation Type

Tailoring the electrical and photo-electrical properties of a WS2 field effect transistor by selective n-type chemical doping
Here, we demonstrate a doping technique which remarkably improves the electrical and photoelectric characteristics of a WS2 field effect transistor (FET) by chemical doping. The shift of the…
Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.
TLDR
A chemical doping technique to achieve low contact resistance by keeping the intrinsic properties of few layers WS2 by using LiF doping in contact engineering of TMDs is reported.
Layer dependent electrical transport in exfoliated graphene FETs under UV illumination
Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping
Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors.
TLDR
A tunable and high-performance anti-ambipolar transistor based on MoTe2/MoS2 heterojunction through in situ photoinduced doping is demonstrated and a tunable multivalue inverter is fabricated that demonstrates precise control over its output logic states and window of midlogic through source-drain bias adjustment.
A reversible and stable doping technique to invert the carrier polarity of MoTe2
TLDR
A physical carrier-type inversion technique to invert the polarity of MoTe2-based field-effect transistors (FETs) with deep ultraviolet (DUV) doping in (oxygen) O2 and (nitrogen) N2 gas environments is established.
High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
TLDR
A remarkable improvement in the electrical characteristics of single-layer WS2 field-effect transistor (SL-WS2 FET) using chemical vapor deposition (CVD)-grown hexagonal BN (h-BN), which shows unprecedented high mobility of 214 cm2/Vs at room temperature.
High-mobility and Air-stable Single- Layer Ws 2 Field-effect Transistors Sandwiched between Chemical Vapor Deposition-grown Hexagonal Bn Films Fet) Using Chemical Vapor Deposition (cvd)-grown Hexagonal Bn (h-bn). Sl-ws 2 Fet Sandwiched between Cvd-grown H-bn Films Shows Unprecedented High Mobility o
Performance of field-effect transistors based on Nb(x)W(1-x)S2 monolayers.
TLDR
The novel Nb doping in monolayer WS2 has eliminated the ambipolar behavior and reduced the Schottky barrier in WS2 FETs.
High-Mobility and High-Optical Quality Atomically Thin WS2
TLDR
It is shown that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS2 leads to superior material quality compared to the widely used direct sulfidization of WO3-based precursor.
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 83 REFERENCES
Formation of p–n junction with stable p-doping in graphene field effect transistors using deep UV irradiation
We demonstrate the modification of the electronic properties of single layer chemical vapor deposition (CVD)-grown graphene by deep ultraviolet (DUV) light irradiation. The shift in the G and 2D…
Mono- and bilayer WS2 light-emitting transistors.
TLDR
The results demonstrate the power of ionic liquid gating in combination with nanoelectronic systems, as well as the compatibility of this technique with optical measurements on semiconducting transition metal dichalcogenides.
Ultrasensitive photodetectors based on monolayer MoS2.
TLDR
Ultraensitive monolayer MoS2 phototransistors with improved device mobility and ON current are demonstrated, showing important potential for applications in MoS 2-based integrated optoelectronic circuits, light sensing, biomedical imaging, video recording and spectroscopy.
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
TLDR
High performance p-type field-effect transistors based on single layered WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics are reported.
Tuning the electrical properties of exfoliated graphene layers using deep ultraviolet irradiation
It is possible to tune the electrical properties of graphene layers in graphene-based nanoelectronic and optoelectronic devices while maintaining their unique band structure and electrical…
Gate-induced insulating state in bilayer graphene devices.
TLDR
This work demonstrates the controlled induction of an insulating state--with large suppression of the conductivity--in bilayer graphene, by using a double-gate device configuration that enables an electric field to be applied perpendicular to the plane.
Edge oxidation effect of chemical-vapor-deposition-grown graphene nanoconstriction.
TLDR
Edge oxidation in the narrow structures explains the origin of the p-type doping effect widely observed in graphene nanodevices.
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.
TLDR
This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.
Single-layer MoS2 phototransistors.
TLDR
The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments.
TLDR
Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain, fast photoresponse, and high thermal stability.
...
1
2
3
4
5
...