Deep surface damage of SiO2 by sputtering with low energy Ar-ions

@inproceedings{Collart1989DeepSD,
  title={Deep surface damage of SiO2 by sputtering with low energy Ar-ions},
  author={E. J. H. Collart and Robert Jan Visser},
  year={1989}
}
Abstract The sputtering of SiO 2 by means of Ar-ions of approximately 1 keV in a RIE reactor has been monitored using laser interferometry. Results were interpreted with a simulation program which takes layer composition and thickness into account. The results of this simulation suggest that oxygen is preferentially sputtered and that the top layer is depleted to elemental Si up to a depth of 85 A. 

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