Deep-submicron MOSFET characteristics with 5 nm gate oxide

  title={Deep-submicron MOSFET characteristics with 5 nm gate oxide},
  author={T. Kobayashi and S. Horiguchi and K. Kiuchi},
  journal={1984 International Electron Devices Meeting},
0.1-10.0 µm channel MOSFETs and 0.3-1.7 µm channel E/E ring oscillators, both with 5 nm gate oxide, are fabricated using n-channel silicon gate technology with the EB direct writing technique to clarify their applicability to LSIs. The 0.28 µm channel MOSFET shows excellent long-channell behavior with high voltage gain in addition to high transconductance of 260 mS/mm and high drain breakdown voltage more than 5 V. The 0.3 µm channel ring oscillator shows a gate delay of 50 ps and small… Expand
3 Citations

Figures from this paper

Ultra-thin silicon-dioxide breakdown characteristics of MOS devices with n+and p+polysilicon gates
In this work we investigate the effect of the gate material on the breakdown characteristics of ultra-thin silicon dioxide films at low voltages (<6 V). When MOS capacitors are stressed with aExpand
MOSFET drain engineering analysis for deep-submicrometer dimensions: a new structural approach
A new MOS transistor structural approach (hot-carrier-induced MOSFET) capable of substantially suppressing adverse hot-carrier effects, while maintaining the other desired performance andExpand
Trends in advanced process technology&#8212;Submicrometer CMOS device design and process requirements
Some of the trends in integrated circuit process development are described. The motivations or technical reasons for this activity are discussed. This effort will continue to develop the downsizingExpand