Deep reactive ion etching of borosilicate glass using an anodically bonded silicon wafer as an etching mask

@inproceedings{Akashi2006DeepRI,
  title={Deep reactive ion etching of borosilicate glass using an anodically bonded silicon wafer as an etching mask},
  author={T. Akashi and Y. Yoshimura},
  year={2006}
}
A new dry-etching method for fabricating anisotropic deep grooves on a borosilicate glass wafer is reported. The method uses a 200 µm thick bulk silicon wafer bonded to a borosilicate glass wafer by anodic bonding as an etching mask and inductively coupled plasma generated by C4F8 or CHF3 gases for etching. The measured etching rate showed that the deep reactive ion etching conditions for achieving a high etching rate are low gas pressure, high gas-flow rate, high antenna power and high bias… CONTINUE READING

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