Deep-level defects study of arsenic-implanted ZnO single crystal

Abstract

of thesis entitled DEEP LEVEL DEFECTS STUDY OF ARSENIC IMPLANTED ZnO SINGLE CRYSTAL submitted by Congyong ZHU for the degree of Master of Philosophy at The University of Hong Kong in September 2008 Zinc oxide has recently received great attention because of its potential applications in the fields of spintronics and optoelectronics. P-type doping is one of… (More)
DOI: 10.1016/j.mejo.2008.07.037

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Cite this paper

@article{Zhu2009DeeplevelDS, title={Deep-level defects study of arsenic-implanted ZnO single crystal}, author={C. Y. Zhu and C. C. Ling and G. Brauer and W. Anwand and W. Skorupa}, journal={Microelectronics Journal}, year={2009}, volume={40}, pages={286-288} }