Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN / AlGa ( In ) N

@inproceedings{Nikishin2003DeepUL,
  title={Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN / AlGa ( In ) N},
  author={Sergey A. Nikishin and Vladimir V. Kuryatkov and Anilkumar CHANDOLU and B. A. Borisov and Gela Kipshidze and I. Ahmad and Mark Holtz and Henryk Temkin},
  year={2003}
}
We report a systematic study of the optical properties of superlattices of AlN/Al0:08Ga0:92(In)N with periods in the range of 1.25–2.25 nm. The superlattices were grown on sapphire substrates using gas source molecular beam epitaxy with ammonia. Effective bandgaps between 4.5 eV (276 nm) and 5.3 eV (234 nm), as determined by optical reflectivity measurements, were obtained by adjusting the barrier and well thickness. These superlattices can be doped nand p-type. We demonstrate double… CONTINUE READING