Deep Trenches in Silicon Structure using DRIE Method with Aluminum as an Etching Mask

@article{Ganji2006DeepTI,
  title={Deep Trenches in Silicon Structure using DRIE Method with Aluminum as an Etching Mask},
  author={B. A. Ganji and B. Y. Majlis},
  journal={2006 IEEE International Conference on Semiconductor Electronics},
  year={2006},
  pages={41-47}
}
In this paper, we describe our experience with deep reactive ion etching (DRIE) of silicon to depths ranging from 10 mum to more than 250 mum for MEMS applications, including MEMS microphone. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature. We used an inductively coupled plasma reactive ion etcher and Al mask. A 90 min etching experiments using etching gas SF6 of 60 standard cubic centimeters per minutes (seem) with oxygen (13… CONTINUE READING