Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture

@article{Nadtochiy2012DecreasingPC,
  title={Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture},
  author={Alexey M. Nadtochiy and Sergey A. Blokhin and A. G. Kuz’menkov and Maksim V. Maksimov and Nikolai A. Maleev and Sergey I. Troshkov and Nikolai N. Ledentsov and Victor M. Ustinov and Alex Mutig and Dieter Bimberg},
  journal={Technical Physics Letters},
  year={2012},
  volume={38},
  pages={106-109}
}
Results of a comparative study of the structural parameters and the static and dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) with microresonators based on Al0.15Ga0.85As and Al0.8Ga0.2As are presented. It is established that the vertical oxidation of layers in the Al0.8Ga0.2As microresonator during formation of the current aperture leads to a significant increase in the oxide thickness. This leads to a considerable decrease in parasitic capacitance of the device… CONTINUE READING

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