Dark-field imaging of thin specimens with a forescatter electron detector at low accelerating voltage.

@article{Brodusch2013DarkfieldIO,
  title={Dark-field imaging of thin specimens with a forescatter electron detector at low accelerating voltage.},
  author={Nicolas Brodusch and Hendrix Demers and Raynald Gauvin},
  journal={Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada},
  year={2013},
  volume={19 6},
  pages={1688-97}
}
A forescatter electron detector (FSED) was used to acquire dark-field micrographs (DF-FSED) on thin specimens with a scanning electron microscope. The collection angles were adjusted with the detector distance from the beam axis, which is similar to the camera length of the scanning transmission electron microscope annular DF detectors. The DF-FSED imaging resolution was calculated with SMART-J on an aluminum alloy and carbon nanotubes (CNTs) decorated with platinum nanoparticles. The… CONTINUE READING