Dark current simulation of GaN/AlGaN p-i-n avalanche photodiode

@article{Cao2009DarkCS,
  title={Dark current simulation of GaN/AlGaN p-i-n avalanche photodiode},
  author={Zhenbo Cao and Weida Hu and X. S. Chen and Wang Lu and Le Wang and Xinxin Li},
  journal={2009 9th International Conference on Numerical Simulation of Optoelectronic Devices},
  year={2009},
  pages={81-82}
}
We report on 2D simulations of dark current for GaN/GaN/Al0.33Ga0.67N p-i-n photodiode. The simulated result is in good agreement with experiment data indicating that avalanche multiplication is the cause of breakdown and band-to-band tunneling is the main source of dark current before breakdown. Effects of interface charge on avalanche current are… CONTINUE READING