Damage-less sputter depositions by plasma charge trap for metal gate technologies

@article{Takeuchi2005DamagelessSD,
  title={Damage-less sputter depositions by plasma charge trap for metal gate technologies},
  author={Hideki Takeuchi and Min She and Kiichi Watanabe and Tsu-Jae King},
  journal={IEEE Transactions on Semiconductor Manufacturing},
  year={2005},
  volume={18},
  pages={350-354}
}
Damage-free sputter deposition process has been developed for metal gate complementary metal-oxide-semiconductor technology. A plasma charge trap (PCT) was introduced in order to eliminate high-energy particle bombardment during sputter deposition processes. Molybdenum (Mo)-gated PMOSFETs were fabricated using a conventional gate-first process. It is shown that the PCT technology yields excellent characteristics in current drivability, as well as in gate oxide integrity (GOI) such as gate… CONTINUE READING

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References

Publications referenced by this paper.
Showing 1-10 of 28 references

Deposition of highquality silicon dioxide by remote plasma CVD technique

T. Fuyuki, T. Furukawa, T. Oka, H. Matsunami
IEICE Trans. Electron., vol. E75C, no. 9, pp. 1013–1018, 1992. • 1992
View 9 Excerpts
Highly Influenced

Fermi-level pinning at the polysilicon/metal oxide interface-Part I

IEEE Transactions on Electron Devices • 2004
View 1 Excerpt

Highly reliable metal gate nMOSFET ’ s by improved CVDWSix films with work function of 4 . 3 eV , ” in Integration on Advanced Microand Nanoelectronic Decives — Critical Issues and Solutions

H. Nakazawa K. Nakajima, K. Sekine, +4 authors Y. Tsunashima
Mater . Res . Soc . Conference Proceedings . Warrendale , PA : Mater . Res . Soc . • 2004

Highly reliable metal gate nMOSFET’s by improved CVD-WSix films with work function of 4.3 eV

K. Nakajima, H. Nakazawa, +5 authors Y. Tsunashima
Integration on Advanced Micro- and Nanoelectronic Decives—Critical Issues and Solutions, ser. Mater. Res. Soc. Conference Proceedings. Warrendale, PA: Mater. Res. Soc., 2004, vol. 811, pp. 149–154. • 2004
View 1 Excerpt

Investigations of metal gate electrodes on HfO dielectrics

J. Schaeffer, S. Samavedam, +13 authors B. White
Integration on Advanced Micro- and Nanoelectronic Decives—Critical Issues and Solutions, ser. Mater. Res. Soc. Conference Proceedings. Warrendale, PA: Mater. Res. Soc., 2004, vol. 811, pp. 137–148. • 2004
View 1 Excerpt

Systematic examination of boron diffusion phenomenon in HfSiON gate insulator

M. Koyama, T. Ino, +3 authors A. Nishiyama
Integration on Advanced Micro- and Nanoelectronic Decives—Critical Issues and Solutions, ser. Mater. Res. Soc. Conference Proceedings. Warrendale, PA: Mater. Res. Soc., 2004, vol. 811, pp. 247–252. • 2004
View 1 Excerpt

Systematic examination of boron diffusion phenomenon in HfSiON gate insulator , ” in Integration on Advanced Microand Nanoelectronic Decives — Critical Issues and Solutions

Y. Kamimuta, M. Suzuki, C. Hongo, A. Nishiyama
Mater . Res . Soc . Conference Proceedings . Warrendale , PA : Mater . Res . Soc . • 2004

A Tuneable Metal Gate Work Function Using Solid State Diffusion of Nitrogen

32nd European Solid-State Device Research Conference • 2002
View 1 Excerpt

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