• Physics
  • Published 1996

Damage Mechanism of InSb Detectors (PV) When Laser-Irradiated,

@inproceedings{Zhiping1996DamageMO,
  title={Damage Mechanism of InSb Detectors (PV) When Laser-Irradiated,},
  author={Jiang Zhiping and Lu Qisheng},
  year={1996}
}
Abstract : The damage mechanisms of InSb detectors (PV) when laser-irradiated are investigated. It is pointed out that the laser damage degrades the p-n junction locally, which has effects similar to those of a parallel resistance on device performance. Various experimental phenomena are explained. The calculated values closely fit the experimental data. This model can also explain the 'flash' effects, i.e., the InSb (PV) detector may have better performance after irradiation with intense light… CONTINUE READING