DNA interlayers enhance charge injection in organic field-effect transistors.

Abstract

By inserting DNA interlayers beneath the Au contact, the contact resistance of PC(70) BM field-effect transistorss is reduced by approximately 30 times at a gate bias of 20 V. The electron and hole mobilities of ambipolar diketopyrrolopyrrole transistors are increased by one order of magnitude with a reduction of the threshold voltage from 12 to 6.5 V. 
DOI: 10.1002/adma.201201248

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