DLTS study on Al<sup>&#x002B;</sup> ion implanted and 1950&#x00B0;C annealed p-i-n 4H-SiC vertical diodes

Abstract

A vertical 4H-SiC p-i-n diode with 2&#x00D7;10<sup>20</sup>cm<sup>&#x2212;3</sup> Al<sup>&#x002B;</sup> implanted emitter and 1950&#x00B0;C/5min post implantation annealing has been characterized by deep level transient spectroscopy (DLTS). Majority (electron) and minority (hole) carrier traps have been found. Electron traps with a homogeneous depth profile… (More)

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