DIFMOS—A floating-gate electrically erasable nonvolatile semiconductor memory technology

@article{Gosney1977DIFMOS8212AFE,
  title={DIFMOS\&\#8212;A floating-gate electrically erasable nonvolatile semiconductor memory technology},
  author={W. M. Gosney},
  journal={IEEE Transactions on Electron Devices},
  year={1977},
  volume={24},
  pages={594-599}
}
  • W. Gosney
  • Published 1 May 1977
  • Engineering
  • IEEE Transactions on Electron Devices
Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A… 

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