• Corpus ID: 199377106

DEGRADATION MECHANISMS AND CHARACTERIZATION TECHNIQUES IN SILICON CARBIDE MOSFETs AT HIGH-TEMPERATURE OPERATION

@inproceedings{Kaplar2011DEGRADATIONMA,
  title={DEGRADATION MECHANISMS AND CHARACTERIZATION TECHNIQUES IN SILICON CARBIDE MOSFETs AT HIGH-TEMPERATURE OPERATION},
  author={Robert J. Kaplar and S. Dasgupta and Matthew J. Marinella and Benjamin Sheffield and Reinhard C. Brock and M. A. Smith and Stanley Atcitty},
  year={2011}
}
Due to a number of advantages over silicon, including higher breakdown field, higher operational junction temperature, and higher thermal conductivity, silicon carbide (SiC) has generated keen interest as a material of choice for power electronic devices. Device characteristics resulting directly from SiC’s superior material properties, including enhanced ability to withstand high voltage, lower on-state resistance and capacitance permitting higher switching frequency, and reduced thermal… 

Figures from this paper

High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs
The temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room temperature
Superjunction MOSFETs in Voltage-Source Three-Level Converters: Experimental Investigation of Dynamic Behavior and Switching Losses
The superjunction MOSFETs with low RDS(on) and fast-switching speed are expected to achieve high efficiency and high-switching-frequency operation in three-phase voltage-source converters. In this
Investigation of Using SiC MOSFET for High Temperature Applications
Abstract This paper presents the performances expected by SiC MOSFETs for high temperature applications. A complete static and dynamic electrical characterization of SiC MOSFETs have been tested
Etude sur les transistors MOSFETs en Carbure de Silicium - Potentiel d'utilisation dans les Applications Hautes Températures
Ce papier presente les performances des MOSFETs en carbure de silicium pour des applications haute temperature. Les caracterisations statiques et dynamiques ont ete realisees avec un packaging
Abstract—The super-junction MOSFETs with low RDS(on) and fast switching speed are expected to achieve high-efficiency and high-switching-frequency operation in three-phase voltage source converters. In this letter, experimental measurements of MOSFET switching behaviour and losses in a mixed-technol
  • 2015
Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs
TLDR
A novel active overcurrent protection scheme through dynamic evaluation of fault current level is proposed and a comparison is made in terms of fault response time, temperature-dependent characteristics, and applications to help designers select a proper protection method.

References

SHOWING 1-2 OF 2 REFERENCES
Extraction of trapped charge in 4H-SiC metal oxide semiconductor field effect transistors from subthreshold characteristics
A technique for characterizing trapped charge in silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) based only on the subthreshold I-V characteristics and its
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
We have observed significant instability in the threshold voltage of 4H-SiC metal-oxide-semiconductor field-effect transistors due to gate-bias stressing. This effect has a strong measurement time