DC characteristics of high-breakdown-voltage p-i-n diodes made by 20-MeV Si implantation in InP:Fe

@article{Nadella1992DCCO,
  title={DC characteristics of high-breakdown-voltage p-i-n diodes made by 20-MeV Si implantation in InP:Fe},
  author={R. K. Nadella and J. Vellanki and M V Prabhakara Rao and H. Dietrich},
  journal={IEEE Electron Device Letters},
  year={1992},
  volume={13},
  pages={473-475}
}
A vertical p-i-n diode is made for the first time in InP:Fe using megaelectronvolt energy ion implantation, A 20-MeV Si implantation and kiloelectronvolt energy Be/P coimplantation are used to obtain a buried n/sup +/ layer and a shallow p/sup +/ layer, respectively. The junction area of the device is 2.3*10/sup -5/ cm/sup 2/ and the intrinsic region thickness is approximately=3 mu m. The device has a high breakdown voltage of 110 V, reverse leakage current of 0.1 mA/cm/sup 2/ at -80 V, off… CONTINUE READING
0 Extracted Citations
5 Extracted References
Similar Papers

Referenced Papers

Publications referenced by this paper.
Showing 1-5 of 5 references

10 - 20 MeV energy range Si implantation in InP : Fe

  • M. V. Rao R. K. Nadella, D. S. Simons, P. H. Chi, H. B. Dietrich
  • 1991

High energy Si implantation into InP:Fe,

  • R. K. Nadella
  • J. Appl. Phys.,
  • 1991
2 Excerpts

Rutherford backscattering studies on high - energy Si implanted InP

  • R. K. Nadella S. M. Gulwadi, M. V. Rao
  • 1991

1990 GaAs vertical PIN diode production process,

  • D. Zych
  • GaAs IC Symp. Dig.,
  • 1990

Indium phosphide mm-wave devices and components

  • B. Fank
  • Microwave J.,
  • 1984

Similar Papers

Loading similar papers…