DC and high-frequency performance of AlGaN / GaN Heterojunction Bipolar Transistors

Abstract

The DC and high frequency performance of AlGaN/GaN Heterojunction Bipolar Transistors (HBTs) is analyzed using an enhanced drift-di€usion model and GaN/AlGaN material parameters, which were previously veri®ed by modeling experimental device characteristics. The emitter±base diode turn-on voltage is as high as 2.7 V while the collector and base ideality… (More)

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