• Computer Science
  • Published 2006

DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Si₀.₈₈Ge₀.₁₂(C) Heterostructure Channel

@inproceedings{Choi2006DCCO,
  title={DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Si₀.₈₈Ge₀.₁₂(C) Heterostructure Channel},
  author={Sang Sik Choi and Hyun Duk Yang and Tae-Hyun Han and Deok-ho Cho and Jea-Yeon Kim and Kyu-Hwan Shim},
  year={2006}
}
Electrical properties of Si?.??Ge?.₁₂(C) p-MOSFETs have been exploited in an effort to investigate Si?.??Ge?.₁₂(C) channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in Si?.??Ge?.₁₂ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation… CONTINUE READING

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