DC Behaviour of Planar Carbon Nanotube Field-Effect Transistors

@inproceedings{John2005DCBO,
  title={DC Behaviour of Planar Carbon Nanotube Field-Effect Transistors},
  author={Deborah L John and D. L. Pulfrey},
  year={2005}
}
The carbon nanotube field-effect transistor (CNFET) has attracted a great deal of interest due to predictions of its superior performance over that of ultimately-scaled silicon MOSFETs [1, 2]. While significant progress has been made in predicting its behaviour, simulations have primarily focused on azimuthally invariant structures, such as the… CONTINUE READING